Langmuir probe electronics upgrade on the tokamak a configuration variable

被引：29

作者：

De Oliveira, H. ^{[1
]}

Marmillod, P. ^{[1
]}

Theiler, C. ^{[1
]}

Chavan, R. ^{[1
]}

Fevrier, O. ^{[1
]}

Labit, B. ^{[1
]}

Lavanchy, P. ^{[1
]}

Marletaz, B. ^{[1
]}

Pitts, R. A. ^{[2
]}

Coda, S. ^{[1
]}

Ahn, J. ^{[3
]}

Albanese, R. ^{[4
]}

Alberti, S. ^{[1
]}

Alessi, E. ^{[5
]}

Allan, S. ^{[6
]}

Anand, H.

Anastassiou, G.

Andrebe, Y.

Angioni, C.

Ariola, M.

Bernert, M.

Beurskens, M.

Bin, W.

Blanchard, P.

Blanken, T. C.

Boedo, J. A.

Bolzonella, T.

Bouquey, F.

Braunmueller, F. H.

Bufferand, H.

Buratti, P.

Calabro, G.

Camenen, Y.

Carnevale, D.

Carpanese, F.

Causa, F.

Cesario, R.

Chapman, I. T.

Chellai, O.

Choi, D.

Cianfarani, C.

Ciraolo, G.

Citrin, J.

Costea, S.

Crisanti, F.

Cruz, N.

Czarnecka, A.

Decker, J.

De Masi, G.

De Tommasi, G.

机构：

[1] Ecole Polytech Fed Lausanne, SPC, CH-1015 Lausanne, Switzerland

[2] ITER Org, Route Vinon Verdon,CS90 046, F-13607 St Paul Les Durance, France

[3] IRFM, CEA, F-13108 Saint Paul Lez Durance, France

[4] Univ Napoli Federico II, Consorzio CREATE, Via Claudio 21, I-80125 Naples, Italy

[5] IFP-CNR, Via R Cozzi 53, I-20125 Milan, Italy

[6] Culham Sci Ctr, CCFE, Abingdon, Oxon OX14 3DB, England

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2019年 / 90卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

621.2 Fusion Reactors - 701.2 Magnetism: Basic Concepts and Phenomena - 932.3 Plasma Physics;

D O I：

10.1063/1.5108876

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A detailed description of the Langmuir probe electronics upgrade for TCV (Tokamak a Configuration Variable) is presented. The number of amplifiers and corresponding electronics has been increased from 48 to 120 in order to simultaneously connect all of the 114 Langmuir probes currently mounted in the TCV divertor and main-wall tiles. Another set of 108 amplifiers is ready to be installed in order to connect 80 new probes, built in the frame of the TCV divertor upgrade. Technical details of the amplifier circuitry are discussed as well as improvements over the first generation of amplifiers developed at SPC (formerly CRPP) in 1993/1994 and over the second generation developed in 2012/2013. While the new amplifiers have been operated successfully for over a year, it was found that their silicon power transistors can be damaged during some off-normal plasma events. Possible solutions are discussed. (C) 2019 Author(s).

引用

页数：13

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Beurskens, M.
Bin, W.
Blanchard, P.
Blanken, T. C.
Boedo, J. A.
Bolzonella, T.
Bouquey, F.
Braunmueller, F. H.
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