New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

被引：68

作者：

Barlini, D. ^{[1
]}

Ciappa, M.

Castellazzi, A.

Mermet-Guyennet, M.

Fichtner, W.

机构：

[1] ETH, Integrated Syst Lab, CH-8006 Zurich, Switzerland

[2] ALSTOM Power Elect Associated Res Lab, F-65600 Semeac, France

来源：

MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2006.07.058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technique is presented, which uses dI(ce)/dt and the transconductance as a thermo-sensitive parameter for the measurement of the static and of the transient average junction temperature in IGBT devices. The paper describes the physics of the signal generation, provides the experimental setup, and discusses the accuracy and the suitability of the technique under operating conditions of the devices.

引用

页码：1772 / 1777

页数：6

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