Rapid thermal mocvd of InGaAs/InP multilayers

被引：0
|
作者：
Kreinin, O
Bahir, G
机构：
来源：
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1997年
关键词：
D O I：
10.1109/ICIPRM.1997.600138
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High quality InGaAs/InP multilayers have been grown by means of rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD), using tertiarybutylphosphine (TBP) as phosphorous source and tertiarybutylarsine (TBA) as arsenic source. The undoped featureless films exhibited an excellent morphology with a narrow x-ray peak of 30 arcsec for InGaAs layer on RT-LPMOCVD grown InP, reflecting a lattice mismatch of 0.02%. A test structure of three Quantum Wells lattice matched InGaAs/InP structure (approximate to 50 Angstrom width of each layer) were grown following determination of the optimum growth parameters for InGaAs and InP layers.
引用
收藏
页码：308 / 311
页数：4
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