Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization

被引：0

作者：

Angelini, A. ^{[1
]}

Camarchia, V. ^{[1
]}

Cappelluti, F. ^{[1
]}

Guerrieri, S. Donati ^{[1
]}

Pirola, M. ^{[1
]}

Bonani, F. ^{[1
]}

Serino, A. ^{[2
]}

Ghione, G. ^{[1
]}

机构：

[1] Politecn Torino, Dipartimento Elettron, Turin, Italy

[2] Univ Roma Tor Vergata, Dipartimento Elettron, Rome, Italy

来源：

PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2006年

关键词：

GaN; power RF FETs; electro-thermal effects; semiconductor device thermal factors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates, relying on an electro-thermal model validated against DC, pulsed DC and S-parameter measurements. The measured devices are backside mounted, but the layout is also conceived for flip-chip mounting. Based on accurate estimation of the device thermal resistance, the model enables to explore and assess the device performances in both backside and flip-chip configurations; results are shown both for conventional ceramic AIN flip-chip mountings, and for advanced (diamond) heatsinks.

引用

页码：105 / +

页数：2

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