Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization

被引：0
|
作者：
Angelini, A. [1 ]
Camarchia, V. [1 ]
Cappelluti, F. [1 ]
Guerrieri, S. Donati [1 ]
Pirola, M. [1 ]
Bonani, F. [1 ]
Serino, A. [2 ]
Ghione, G. [1 ]
机构：
[1] Politecn Torino, Dipartimento Elettron, Turin, Italy
[2] Univ Roma Tor Vergata, Dipartimento Elettron, Rome, Italy
来源：
PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2006年
关键词：
GaN; power RF FETs; electro-thermal effects; semiconductor device thermal factors;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates, relying on an electro-thermal model validated against DC, pulsed DC and S-parameter measurements. The measured devices are backside mounted, but the layout is also conceived for flip-chip mounting. Based on accurate estimation of the device thermal resistance, the model enables to explore and assess the device performances in both backside and flip-chip configurations; results are shown both for conventional ceramic AIN flip-chip mountings, and for advanced (diamond) heatsinks.
引用
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页码：105 / +
页数：2
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