INFLUENCE OF PULSED LASER RADIATION ON ELECTRICAL AND MAGNETORESISTIVE PROPERTIES OF La2/3Sr1/3MnO3 FILMS

被引：0
|
作者：
Cerniuke, I. [1 ]
Vengalis, B. [1 ]
Anisimovas, F. [1 ]
Maneikis, A. [1 ]
Grigaliunaite-Vonseviciene, G. [2 ]
机构：
[1] Ctr Phys Sci & Technol, Inst Semicond Phys, Gostauto 11, LT-01108 Vilnius, Lithuania
[2] Vilnius Gediminas Tech Univ, LT-10223 Vilnius, Lithuania
来源：
5TH INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIALS: FUNDAMENTALS AND APPLICATIONS 2014 | 2014年
关键词：
LSMO thin films; magnetoresistance; laser-induced defects;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We report modification of electrical and magnetoresistive properties for the La2/3Sr1/3MnO3/MgO(100) thin films influenced by high power pulsed (tau congruent to 10 ns) laser radiation (lambda = 532 nm). SEM surface study revealed cracks extended along [100] directions and partially melted material at film surface with radiation power increasing. Low field magnetoresistance typical for high quality intergrain junctions has been measured at T< 240 K for the films with laser beam-induced cracks while partial melting of the material resulted increased electrical resistance, lowering of the paramagnetic to ferromagnetic transition temperature T-C and reduced magmetoresistance values in the vicinity of T-C.
引用
收藏
页码：286 / +
页数：2
相关论文
共 50 条
  • [41] Atomic disorder investigation in La2/3Sr1/3MnO3 nanopowders using electrical impedance
    Paulo, Von I. M.
    Revoredo, F. A.
    Padron-Hernandez, E.
    MATERIALS LETTERS, 2016, 174 : 150 - 152
  • [42] Temperature-induced variation of magnetoresistance and tunneling current in La2/3Sr1/3MnO3/LaMnO3 (ZrO2)/La2/3Sr1/3MnO3 junctions
    Jin, Yuan
    Cui, Xiaopeng
    Gao, Yuze
    Fang, Yifei
    Lu, Bo
    Cao, Shixun
    Zhang, Jincang
    SOLID STATE COMMUNICATIONS, 2015, 215 : 12 - 16
  • [43] Atomic structure and chemistry of a[100] dislocation cores in La2/3Sr1/3MnO3 films
    Song, Kepeng
    Du, Kui
    Ye, Hengqiang
    MICRON, 2017, 96 : 72 - 76
  • [44] On-off magnetoresistive sensor based on screen-printed La2/3Sr1/3MnO3 nanganite
    Rubi, D.
    Fontcuberta, J.
    Lacaba, M.
    Gonzalez, A. M.
    Baztan, J.
    Calleja, A.
    Aragones, U.
    Capdevila, X. G.
    Segarra, M.
    SENSORS AND ACTUATORS A-PHYSICAL, 2006, 132 (01) : 52 - 55
  • [45] Toward ultrathin ferromagnetic metal of (110) La2/3Sr1/3MnO3 thin films
    Li, Lin
    Ji, Yaoyao
    Diao, Zhenyu
    Zhang, Jiandi
    Liao, Zhaoliang
    APPLIED PHYSICS LETTERS, 2020, 117 (12)
  • [46] Growth kinetics engineered magnetoresistance response in La2/3Sr1/3MnO3 thin films
    Pomar, A.
    Santiso, J.
    Sandiumenge, F.
    Roqueta, J.
    Bozzo, B.
    Frontera, C.
    Balcells, Ll
    Martinez, B.
    Konstantinovic, Z.
    APPLIED PHYSICS LETTERS, 2014, 104 (15)
  • [47] Epitaxial Integration of La2/3Sr1/3MnO3 and Fe Films by the Use of a MgO Spacer
    Martinez-Boubeta, Carlos
    Konstantinovic, Zorica
    Balcells, Lluis
    Estrade, Sonia
    Arbiol, Jordi
    Cebollada, Alfonso
    Martinez, Benjamin
    CRYSTAL GROWTH & DESIGN, 2010, 10 (03) : 1017 - 1020
  • [48] Effects of growing conditions on the electric and magnetic properties of strained La2/3Sr1/3MnO3 thin films
    卢海霞
    王晶
    沈保根
    孙继荣
    Chinese Physics B, 2015, (02) : 423 - 427
  • [49] Complex impedance analysis of granular La2/3Sr1/3MnO3 manganite thin films
    Shim, IB
    Park, KT
    Kim, CS
    Oh, YJ
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 226 (PART I) : 733 - 735
  • [50] Enhanced field sensitivity close to percolation in magnetoresistive La2/3Sr1/3MnO3/CeO2 composites
    Inst. de Cie. de Mat. de Barcelona, Consejo Sup. de Invest. Cie., Camp. Univ. Auton. de Barcelona, E-08193 Bellaterra, Catalunya, Spain
    Appl Phys Lett, 26 (4014-4016):
12345