Enhanced electrical property of Ni-doped CoOx hole transport layer for inverted perovskite solar cells

被引：16

作者：

Huang, Aibin ^{[1
,2
]}

Lei, Lei ^{[1
]}

Yu, Yu ^{[1
,2
]}

Liu, Yan ^{[1
]}

Yang, Songwang ^{[3
]}

Bao, Shanhu ^{[1
]}

Cao, Xun ^{[1
]}

Jin, Ping ^{[1
,4
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Dingxi 1295, Shanghai, Peoples R China

[2] Univ Chinese Acad Sci, Yuquan 19, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Shanghai Instute Ceram, CAS Key Lab Mat Energy Convers, Heshuo 588, Shanghai 201899, Peoples R China

[4] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 20期

关键词：

magnetron sputtering; Ni-doped CoOx; hole transport material; perovskite solar cell; THIN-FILM; LOW-TEMPERATURE; EFFICIENT;

D O I：

10.1088/1361-6528/aa6707

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultrathin Ni doped CoOx films were prepared by direct current co-sputtering at room temperature as inorganic hole transport materials for inverted perovskite solar cells. P-type doping was designed to adjust the valence band position of CoOx to match the that of CH3NH3PbI3, which would effectively eliminate the interface barrier. Moreover, the hole extraction ability would be enhanced and the power conversion efficiency of the devices hence increased from 3.68% to 9.60%. The optimized performance was also accompanied by decent stability as a result of its intrinsic stability.

引用

页数：7

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