Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy

被引：4

作者：

Tan, W. S. ^{[1
]}

Kauer, M. ^{[1
]}

Hooper, S. E. ^{[1
]}

Smeeton, T. M. ^{[1
]}

Bousquet, V. ^{[1
]}

Rossetti, M. ^{[1
]}

Heffernan, J. ^{[1
]}

Xiu, H. ^{[2
]}

Humphreys, C. J. ^{[2
]}

机构：

[1] Sharp Labs Europe Ltd, Oxford OX4 4GB, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

HIGH-POWER; OPERATION;

D O I：

10.1002/pssa.200880842

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports the state of the art performance for blue-violet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth have resulted in a threshold current density of 3.6 kA/cm(2), which translates into improved cw, lifetime of up to 42 hours. Reducing the internal loss resulted in a high cw slope efficiency of 1.08 W/A and a maximum cw output power of 145 mW. To obtain a better understanding of the LD failure mechanism, degraded LDs were analysed using surface mapping techniques such as photoluminescence and electroluminescence on a micrometric scale, which all is the identification of failure regions. These measurements reflected increased nonradiative recombination in localized regions and increased current injection non-uniformities as possible mechanisms for LD performance degradation after aging. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1205 / 1210

页数：6

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