Structure of Hafnium Silicate Films Formed by Atomic Layer Deposition

被引：2

作者：

Liu, J. ^{[1
]}

Wu, X. ^{[2
]}

Lennard, W. N. ^{[1
]}

Landheer, D. ^{[2
]}

机构：

[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 2009年 / 25卷 / 06期

基金：

加拿大自然科学与工程研究理事会;

关键词：

SPINODAL DECOMPOSITION; GATE DIELECTRICS; PHASE-SEPARATION; THIN-FILMS; SCATTERING; MIXTURE; POLYMER;

D O I：

10.1149/1.3206616

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hf distributions in as-grown and annealed (HfO2)(0.25)(SiO2)(0.75) films with thicknesses in the range 4-13 nm were investigated by high resolution transmission electron microscopy (HRTEM), angle resolved X-ray photoelectron spectroscopy (ARXPS) and medium energy ion scattering (MEIS). HRTEM images show a layered structure in films thinner than 8 nm. ARXPS data also show a non-uniform distribution of Hf throughout the film depth. A diffusion of SiO2 to the film surface after a longer time anneal was observed by MEIS. All these observations provide evidence for surface-directed spinodal decomposition in the pseudobinary (HfO2)(x)(SiO2)(1-x) alloy system.

引用

页码：163 / 172

页数：10

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