Niobium Silicon Alloys for Kinetic Inductance Detectors

被引:7
|
作者
Calvo, M. [1 ,2 ]
D'Addabbo, A. [1 ,2 ,3 ]
Monfardini, A. [1 ,2 ]
Benoit, A. [1 ,2 ]
Boudou, N. [1 ,2 ]
Bourrion, O. [4 ]
Catalano, A. [4 ]
Dumoulin, L. [5 ]
Goupy, J. [1 ,2 ]
Le Sueur, H. [5 ]
Marnieros, S. [5 ]
机构
[1] Inst Neel, F-38042 Grenoble, France
[2] Univ Grenoble 1, CNRS, F-38042 Grenoble, France
[3] Univ Roma La Sapienza, I-00185 Rome, Italy
[4] Lab Phys Subatom & Cosmol, Grenoble, France
[5] Ctr Spectrometrie Nucl & Spectrometrie Masse, Paris, France
关键词
Kinetic inductance detectors; mm-Wave detectors; Superconducting properties; ARRAYS;
D O I
10.1007/s10909-013-1072-6
中图分类号
O59 [应用物理学];
学科分类号
摘要
We are studying the properties of Niobium Silicon amorphous alloys as a candidate material for the fabrication of highly sensitive kinetic inductance detectors (KID), optimized for very low optical loads. As in the case of other composite materials, the NbSi properties can be changed by varying the relative amounts of its components. Using a NbSi film with T = 1 K we have been able to obtain the first NbSi resonators, observe an optical response and acquire a spectrum in the band 50-300 GHz. The data taken show that this material has very high kinetic inductance and normal state surface resistivity . These properties are ideal for the development of KID. More measurements are planned to further characterize the NbSi alloy and fully investigate its potential.
引用
收藏
页码:518 / 523
页数:6
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