Low-frequency noise characterization of very large value resistors

被引：22
|
作者：
Arnaboldi, C
Bucci, C
Cremonesi, O
Fascilla, A
Nucciotti, A
Pavan, M
Pessina, G
Pirro, S
Previtali, E
Sisti, M
机构：
[1] Ist Nazl Fis Nucl, I-20126 Milan, Italy
[2] Ist Nazl Fis Nucl, Lab Gran Sasso, I-67010 Assergi, AQ, Italy
[3] Univ Insubria, Como, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 04期
关键词：
high value resistors; noise; noise measurement; semiconductor device noise;
D O I：
10.1109/TNS.2002.801507
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple circuit configuration is described that allows one to characterize the noise of very large value resistors. With this measurement setup, we investigated, at different bias voltages, the low-frequency noise of large value resistors, tens of GOmega range, realized with different technologies. A technique is suggested that allows reducing the low-frequency noise contribution by optimizing the connecting arrangement. A short review of the resistor noise theory is given.
引用
收藏
页码：1808 / 1813
页数：6
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