Microcrystalline silicon, grain boundaries and role of oxygen

被引：15

作者：

Kocka, J. ^{[1
]}

Stuchlikova, H. ^{[1
]}

Ledinsky, M. ^{[1
]}

Stuchlik, J. ^{[1
]}

Mates, T. ^{[1
]}

Fejfar, A. ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 08期

关键词：

Microcrystalline silicon; Grain boundaries; Electronic transport; Hydrogen; Oxygen; TRANSPORT; DISCONTINUITIES; GROWTH;

D O I：

10.1016/j.solmat.2009.01.013

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The authors report on the correlation of the oxygen content for three high growth-rate series of thin Si films crossing the boundary between amorphous and microcrystalline growth together with the evolution of the prefactor and the activation energy of the dark d.c. conductivity. The different roles of oxygen, such as doping, alloying or defect passivation, are discussed in the framework of the model of transport based on the formation of large grain boundaries with an increased band gap due to hydrogen and/or oxygen alloying. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1444 / 1447

页数：4

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