Effects of phenolic resin contents on microstructures and properties of c/sic-diamond composites

被引:8
|
作者
Li, Jingxin [1 ]
Liu, Yongsheng [1 ]
Chen, Chao [1 ]
Pan, Yu [2 ]
Wang, Jing [1 ]
Wang, Ning [2 ]
机构
[1] Northwestern Polytech Univ, Sci & Technol Thermostruct Composite Mat Lab, Xian, Peoples R China
[2] Natl Univ Def Technol, Coll Aerosp Sci & Engn, Sci & Technol Scramjet Lab, Changsha, Peoples R China
基金
中国国家自然科学基金;
关键词
composites; microstructure; properties; reactive melt infiltration;
D O I
10.1111/jace.17639
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, C/SiC-diamond composites were obtained by chemical vapor infiltration (CVI) and reactive melt infiltration (RMI), and the effects of phenolic resin contents on the microstructures and properties of as-obtained C/SiC-diamond composites were studied. The results suggested a significant influence of phenolic resin contents on the pore structure of the composites before reactive melt infiltration (RMI), as well as phase composition and density of the matrix after RMI. The mechanical properties of composites were shown to correlate with the threshold effect of phenolic resin. Sample R5 prepared with high phenolic resin contents displayed significantly declined mechanical properties. On the other hand, adjustment of the phenolic resin content yielded samples with maximum room temperature thermal conductivity reaching 14.75 W/(m center dot K). The theoretical thermal conductivity of the composites calculated by the Hasselman-Johnson (H-J) theoretical model was estimated to 24.52 W/(m center dot K). Overall, the increase in phenolic resin content led to unreacted diamond-C regions and the formation of substantial porosity. These features reduced the thermal conductivity of the resulting C/SiC-diamond composites.
引用
收藏
页码:3424 / 3442
页数:19
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