Large perpendicular magnetic anisotropy in epitaxial Fe/MgAl2O4(001) heterostructures

被引:30
|
作者
Xiang, Qingyi [1 ,2 ]
Mandal, Ruma [2 ]
Sukegawa, Hiroaki [2 ]
Takahashi, Yukiko K. [2 ]
Mitani, Seiji [1 ,2 ]
机构
[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3058577, Japan
关键词
TUNNEL-JUNCTIONS; MAGNETOCRYSTALLINE ANISOTROPY; ROOM-TEMPERATURE; ULTRATHIN FILMS; MAGNETORESISTANCE; TRANSITION; SURFACES; BARRIERS; AG(100);
D O I
10.7567/APEX.11.063008
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the perpendicular magnetic anisotropy (PMA) and related properties of epitaxial Fe (0.7 nm)/MgAl2O4 (001) heterostructures prepared by electron beam evaporation. Using an optimized structure, we obtained a large PMA energy of MJ/m(3) at room temperature, which is comparable to that in ultrathin-Fe/MgO(001) heterostructures. Both the PMA energy and saturation magnetization showed a weak temperature dependence, ensuring a wide working temperature range in applications. The effective magnetic damping constant of the 0.7 nm Fe layer was found to be -41.02 using the time-resolved magneto-optical Kerr effect. This study demonstrated the suitability of the Fe/MgAl2O4 heterostructure for use in perpendicular magnetic tunnel junctions, as well as good agreement with theoretical predictions. (C) 2018 The Japan Society of Applied Physics
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Strain relaxation in Fe3O4/MgAl2O4 heterostructures: Mechanism for formation of antiphase boundaries in an epitaxial system with identical symmetries of film and substrate
    Luysberg, M.
    Sofin, R. G. S.
    Arora, S. K.
    Shvets, I. V.
    PHYSICAL REVIEW B, 2009, 80 (02):
  • [32] Growth and electron microscopy study of GaN/MgAl2O4 heterostructures
    Li, Guoqiang
    Shih, Shao-Ju
    Fu, Li
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (06): : 1302 - 1304
  • [33] Ag-induced large perpendicular magnetic anisotropy in Mn/Ag/Fe(001)
    Kim, Dongyoo
    Yang, Jeonghwa
    Hong, Jisang
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (08)
  • [34] Growth and electron microscopy study of GaN/MgAl2O4 heterostructures
    Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
    不详
    Phys. Status Solidi A Appl. Mater. Sci., 6 (1302-1304):
  • [35] Perpendicular magnetic anisotropy of full-Heusler Co2FeAl0.5Si0.5 films induced by MgAl2O4 layer
    Li, L.
    Xu, X.
    Wu, Y.
    Wang, Z.
    Miao, J.
    Jiang, Y.
    2015 IEEE MAGNETICS CONFERENCE (INTERMAG), 2015,
  • [36] Perpendicular magnetic anisotropy in CoFe2O4(001) films epitaxially grown on MgO(001)
    Yanagihara, H.
    Uwabo, K.
    Minagawa, M.
    Kita, Eiji
    Hirota, Noriyuki
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [37] Epitaxial growth of InN films on MgAl2O4 (111) substrates
    Tsuchiya, T
    Miki, O
    Shimada, K
    Ohnishi, M
    Wakahara, A
    Yoshida, A
    JOURNAL OF CRYSTAL GROWTH, 2000, 220 (03) : 185 - 190
  • [38] Perpendicular magnetic anisotropy in epitaxial Cu/Ni/Cu/Si(001)
    Inglefield, HE
    Bochi, G
    Ballentine, CA
    OHandley, RC
    Thompson, CV
    THIN SOLID FILMS, 1996, 275 (1-2) : 155 - 158
  • [39] Magnetic anisotropy of epitaxial Fe (001) micrometric squares
    Martín, JJ
    Costa-Krämer, JL
    Menéndez, JL
    Cebollada, A
    Anguita, JV
    Briones, F
    Vicent, JL
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 226 : 1875 - 1877
  • [40] Large Perpendicular Magnetocrystalline Anisotropy at the Fe/Pb(001) Interface
    Ma, Xiaoxuan
    Hu, Jun
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (15) : 13181 - 13186