Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

被引：3
|
作者：
Zhang, Lin-Qing [1 ]
Liu, Zhuo [1 ]
Zhao, Sheng-Xun [1 ]
Lin, Min-Zhi [1 ]
Wang, Peng-Fei [1 ]
机构：
[1] Fudan Univ, State Key Lab ASIC & Syst, Collaborat Innovat Ctr IC Design & Mfg Yangtze Ri, Shanghai 200433, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期
关键词：
AlN/GaN high electron mobility transistors (HEMTs); low temperature; microwave annealing (MWA); ohmic contact; TRANSISTORS;
D O I：
10.1109/TED.2017.2647963
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief, a low-temperature microwave annealing (MWA) method is demonstrated for the formation of ohmic contact to AlN/GaN high electron mobility transistors (HEMTs) for the first time. Compared with the traditional rapid thermal annealing (RTA) technique, MWA-HEMT can achieve a comparable low ohmic contact resistance with much smoother surface of ohmic contacts. Transmission electron microscopy results show that no direct current path connecting the 2-D electron gas and the metal is formed. Temperature-dependent contact resistance measurement indicates that field emission tunneling dominates the current transport mechanism in ohmic contact formation. The maximum dc output current density of 1.4 A/mm and the peak extrinsic transconductance (Gm) of 270 mS/mm are measured on 2 x 8 mu m(2) gate MWA-HEMTs. Besides, MWA-HEMTs have higher I-ON/I-OFF ratio due to the lower gate leakage current than that of RTA-HEMTs.
引用
收藏
页码：1385 / 1389
页数：5
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