Impact of Self-Heating Effect in Hot Carrier Injection Modeling

被引：0

作者：

Lee, Dong Seup ^{[1
]}

Varghese, Dhanoop ^{[1
]}

Sonnet, Arif ^{[1
]}

Joh, Jungwoo ^{[1
]}

Venugopal, Archana ^{[1
]}

Krishnan, Srikanth ^{[1
]}

机构：

[1] Texas Instruments Inc, Analog Technol Dev, Dallas, TX 75266 USA

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

hot carrier injection; self-heating; junction temperature; thermal simulation; DEGRADATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper studies the impact of self-heating effects in DC-based Hot Carrier Injection (HCI) modeling in power LDMOS devices. Continuous and large power consumption under the on-state DC stress can result in substantial increase in device temperature, which potentially causes non-negligible error in the HCI modeling. The issue is systematically investigated and verified through various approaches such as comparison of HCI degradation between the devices with different voltage ratings and finger widths, junction temperature estimation with 3D thermal simulation, and pulse based stress modeling. In addition, it is shown that reliability projection methodology based on the actual circuit waveforms can be more immune to the potential errors caused by the self heating effect in the conventional DC-based modeling.

引用

页码：315 / 318

页数：4

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