The effect of diamond film nucleation and growth in different substrate pretreatment methods

被引：0
|
作者：
Zhou, JA [1 ]
Wang, JH [1 ]
Yuan, RZ [1 ]
Mei, BC [1 ]
Li, QA [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
来源：
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 1999年 / 14卷 / 03期
关键词：
microwave plasma; diamond film; substrate pretreatment; nucleation;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The diamond film on single crystal silicon substrate in three kinds of substrate is deposited by pretreatment method using microwave plasma, the diamond film is analyzed using SEM and Raman, the reasons why substrate pretreatment affects nucleation and growth are probed. The results show that substrate pretreatment directly affects nucleation and growth of diamond film, homogeneous nucleation and growth can be formed only in suitable pretreatment method.
引用
收藏
页码：48 / 52
页数：5
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