Layered PtSe2 for Sensing, Photonic, and (Opto-)Electronic Applications

被引:63
|
作者
Wang, Gaozhong [1 ,2 ,3 ]
Wang, Zhongzheng [4 ]
McEvoy, Niall [3 ,5 ]
Fan, Ping [6 ]
Blau, Werner J. [2 ,3 ]
机构
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
[2] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland
[3] Trinity Coll Dublin, AMBER, Dublin 2, Ireland
[4] Lingnan Normal Univ, Sch Informat Engn, Zhanjiang 524048, Guangdong, Peoples R China
[5] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
[6] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China
基金
爱尔兰科学基金会;
关键词
optoelectronics; photodetectors; photonics; PtSe; (2); ultrafast lasers; TRANSITION-METAL-DICHALCOGENIDE; PLATINUM DISELENIDE; 2-PHOTON ABSORPTION; SATURABLE ABSORBER; HIGH-PERFORMANCE; BANDGAP RENORMALIZATION; PRESSURE SENSOR; BROAD-BAND; ULTRAFAST; LASER;
D O I
10.1002/adma.202004070
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe2, a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disadvantages of a range of synthesis methods for PtSe2 are initially compared, followed by a discussion of its outstanding properties, and industrial and commercial advantages. Research focused on the broadband nonlinear photonic properties of PtSe2, as well as reports of its use as a saturable absorber in ultrafast lasers, are then reviewed. Additionally, the advances that have been achieved in a range of PtSe2-based field-effect transistors, photodetectors, and sensors are summarized. Finally, a conclusion on these results along with the outlook for the future is presented.
引用
收藏
页数:23
相关论文
共 50 条
  • [41] Tuning the electronic properties of HfSe2/PtSe2 heterostructure using electric field and biaxial strain
    Su JinNan
    Chen JunJie
    Pan Min
    Hu KaiGe
    Wen MinRu
    Xing XiangJun
    Tang ZhenHua
    Wu FuGen
    Nie ZhaoGang
    Dong HuaFeng
    SCIENTIA SINICA-PHYSICA MECHANICA & ASTRONOMICA, 2021, 51 (08)
  • [42] Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications
    Lu, Yu
    Wang, Yue
    Xu, Chenhao
    Xie, Chao
    Li, Wenbin
    Ding, Jie
    Zhou, Wanying
    Qin, Zipeng
    Shen, Xinyi
    Luo, Lin-Bao
    NANOSCALE, 2021, 13 (16) : 7606 - 7612
  • [43] Layered Platinum Dichalcogenides (PtS2, PtSe2, and PtTe2) Electrocatalysis: Monotonic Dependence on the Chalcogen Size
    Chia, Xinyi
    Adriano, Ambrosi
    Lazar, Petr
    Sofer, Zdenek
    Luxa, Jan
    Pumera, Martin
    ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (24) : 4306 - 4318
  • [44] Growth Pathway and Phase Transition From Quasi-layered Pt5Se4 to Layered PtSe2 Nanocrystals
    Si, Nan
    Wang, Rui
    He, Qingyuan
    Liu, Siyu
    Wang, Yanming
    Yuan, Qinglin
    SMALL METHODS, 2025,
  • [45] Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films
    Wagner, Stefan
    Yim, Chanyoung
    McEvoy, Niall
    Kataria, Satender
    Yokaribas, Volkan
    Kuc, Agnieszka
    Pindl, Stephan
    Fritzen, Claus-Peter
    Heine, Thomas
    Duesberg, Georg S.
    Lemme, Max C.
    NANO LETTERS, 2018, 18 (06) : 3738 - 3745
  • [46] Nanoscale tailoring of dendrimers and polymers for photonic and opto-electronic applications.
    Jen, AKY
    Luo, JD
    Ma, H
    Liu, S
    Liu, L
    Haller, M
    Sassa, T
    Kang, SH
    Dalton, LR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U428 - U428
  • [47] Modulation of Electronic Properties of PtSe2/XBr2 (X = Ni, Co) Heterostructures by Strain and Electric Field
    Ma, Yaqiang
    Yang, Guoliang
    Wang, Zhen
    Wei, Dong
    Yu, Heng
    Liu, Ming
    Zhao, Yidan
    Sun, Xiaoxin
    Zhao, Xu
    Dai, Xianqi
    SEMICONDUCTORS, 2024, 58 (12) : 1006 - 1015
  • [48] Nanoscale tailoring of dendrimers and polymers for photonic and opto-electronic applications.
    Jen, AKY
    Hong, M
    Luo, JD
    Liu, S
    Haller, M
    Lu, L
    Kang, SH
    Sassa, T
    Dalton, L
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U56 - U56
  • [49] Computational insights into electronic characteristics of 2D PtSe2 nanomaterials: Effects of vacancy defects and strain engineering
    Liu, Guogang
    Chen, Tong
    Xu, Zhonghui
    Zhou, Guanghui
    Xiao, Xianbo
    VACUUM, 2021, 194
  • [50] Interfacial electronic properties between PtSe2 and 2D metal electrodes: a first-principles simulation
    Tian, Xinyue
    Zhang, Wenfei
    Zhang, Guang-Ping
    Li, Zong-Liang
    Wang, Chuan-Kui
    Wang, Minglang
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (16) : 11545 - 11554