Layered PtSe2 for Sensing, Photonic, and (Opto-)Electronic Applications

被引:63
|
作者
Wang, Gaozhong [1 ,2 ,3 ]
Wang, Zhongzheng [4 ]
McEvoy, Niall [3 ,5 ]
Fan, Ping [6 ]
Blau, Werner J. [2 ,3 ]
机构
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
[2] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland
[3] Trinity Coll Dublin, AMBER, Dublin 2, Ireland
[4] Lingnan Normal Univ, Sch Informat Engn, Zhanjiang 524048, Guangdong, Peoples R China
[5] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
[6] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China
基金
爱尔兰科学基金会;
关键词
optoelectronics; photodetectors; photonics; PtSe; (2); ultrafast lasers; TRANSITION-METAL-DICHALCOGENIDE; PLATINUM DISELENIDE; 2-PHOTON ABSORPTION; SATURABLE ABSORBER; HIGH-PERFORMANCE; BANDGAP RENORMALIZATION; PRESSURE SENSOR; BROAD-BAND; ULTRAFAST; LASER;
D O I
10.1002/adma.202004070
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe2, a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disadvantages of a range of synthesis methods for PtSe2 are initially compared, followed by a discussion of its outstanding properties, and industrial and commercial advantages. Research focused on the broadband nonlinear photonic properties of PtSe2, as well as reports of its use as a saturable absorber in ultrafast lasers, are then reviewed. Additionally, the advances that have been achieved in a range of PtSe2-based field-effect transistors, photodetectors, and sensors are summarized. Finally, a conclusion on these results along with the outlook for the future is presented.
引用
收藏
页数:23
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