2-Dimensional 2-Dot 1-Electron Quantum Cellular Automata-Based Dynamic Memory Design

被引：1
|
作者：
Ghosh, Mili [1 ]
Mukhopadhyay, Debarka [2 ]
Dutta, Paramartha [1 ]
机构：
[1] Visva Bharati Univ, Dept Comp & Syst Sci, Santini Ketan, W Bengal, India
[2] Bengal Inst Technol & Management, Dept Comp Sci & Engn, Santini Ketan, W Bengal, India
来源：
PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON FRONTIERS IN INTELLIGENT COMPUTING: THEORY AND APPLICATIONS (FICTA) 2015 | 2016年 / 404卷
关键词：
Dynamic memory; 2-dot QCA; Memory loop; Majority voter; Planar crossing; PARALLEL MEMORY;
D O I：
10.1007/978-81-322-2695-6_30
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
Quantum dot cellular automata (QCA) is supposed to be the most promising technology which is an efficient nanotechnology and overcomes the limitations of the CMOS technology. Thus this technology is considered as the most preferable replacement of CMOS. This paper presents a design methodology of dynamic memory using 2-dot 1-electron QCA. According to the best of our knowledge, this has not been reported yet. The proposed design is supposed to be an optimum design with respect to cell requirement.
引用
收藏
页码：357 / 365
页数：9
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