Photoluminescence of GeSi/Si(001) self-assembled islands with dome and hut shape

被引：7
|
作者：
Novikov, AV [1 ]
Shaleev, MV [1 ]
Lobanov, DN [1 ]
Yablonsky, AN [1 ]
Vostokov, NV [1 ]
Krasilnik, ZF [1 ]
机构：
[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 23卷 / 3-4期
关键词：
self-assembled islands; photoluminescence; dome-island; hut-cluster;
D O I：
10.1016/j.physe.2003.12.138
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The photoluminescence spectra of GeSi/Si (0 0 1) self-assembled islands produced by solid source molecular beam epitaxy in a wide range (460-700degreesC) of growth temperatures were investigated. The results showed a blue shift of the island-related photoluminescence peak with a growth temperature lowering from 600degreesC to 550degreesC. The observed blue shift of the island photo luminescence peak is associated with a sharp decrease in the average height of the island, which occurs through a change of its shape from dome to hut as the growth temperature lowers from 600degreesC to 550degreesC. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：416 / 420
页数：5
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