Voltage Transient Measurement and Extraction of Power RF MOSFET Thermal Time Constants

被引：0

作者：

Baylis, Charles ^{[1
]}

Dunleavy, Lawrence ^{[1
,2
]}

机构：

[1] Univ S Florida, Dept Elect Engn, Ctr Wireless & Microwave Informat Syst, Tampa, FL 33620 USA

[2] Modelithics Inc, Tampa, FL USA

来源：

2007 70TH ARFTG MICROWAVE MEASUREMENT CONFERENCE (ARFTG) | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal time constants have been measured for a high-power Si VDMOSFET using a transient setup measuring voltage across a small resistor placed in series with the drain of the device. A voltage step is applied to the gate of the transistor to step the device from threshold to possessing a significant DC power dissipation. Exponential models are fit to the transient results. The traditional one-pole fit is compared to a two-pole fit. It is discovered that the two-pole fit provides a slightly better prediction of the transient.

引用

页数：4

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