Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices

被引：42
|
作者：
Pullin, MJ [1 ]
Hardaway, HR [1 ]
Heber, JD [1 ]
Phillips, CC [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Expt Solid State Grp, London SW7 2BZ, England
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 22期
关键词：
D O I：
10.1063/1.125288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Negative luminescence operation is reported for p-n diode devices with type-II InAs/InAsSb strained-layer-superlattice active regions which have a spectral peak at 4.2 mu m and a negative luminescence efficiency of up to 20%. (C) 1999 American Institute of Physics. [S0003-6951(99)00248-X].
引用
收藏
页码：3437 / 3439
页数：3
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