Current induced doping in graphene-based transistor with asymmetrical contact barriers

被引：5
|
作者：
Chen, Wei [1 ]
Qin, Shiqiao [1 ,2 ]
Zhang, Xue-Ao [1 ,2 ]
Zhang, Sen [1 ]
Fang, Jingyue [1 ]
Wang, Guang [1 ]
Wang, Chaocheng [3 ]
Wang, Li [1 ,3 ]
Chang, Shengli [1 ,2 ]
机构：
[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
[3] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Carrier concentration - Graphene transistors - Drain current;
D O I：
10.1063/1.4867018
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The metal/graphene contacts play a very important role in the performance of graphene-based devices. We report here a unique observation of current-induced doping in graphene transistors. The charge carrier type and the concentration in graphene can be manipulated by the current flowing through the graphene device, arising from the asymmetrical metal/graphene barriers between the source and drain electrodes and the accompanied current crowding effect. (C) 2014 AIP Publishing LLC.
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页数：4
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