Breakdown of the quantum hall effect in regularly inhomogeneous 2D electron systems

被引：2

作者：

Shikin, V. B. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

JETP LETTERS | 2006年 / 84卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S0021364006130066

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A breakdown mechanism is discussed for the current - voltage characteristic of the system of integer Hall channels in a 2D sample with a regularly inhomogeneous 2D electron density. It has been shown that the appearance of an external potential V on the "edges" of such strips leads to two alternatives: as V increases, the strip width decreases to zero or increases geometrically but "deteriorates qualitatively." In both cases with their ( different) thresholds, integer strips lose their properties inherent in them in the quantum Hall effect regime. These thresholds are attributed here to the asymmetric breakdown of the quantum Hall effect for the system of integer channels.

引用

页码：27 / 30

页数：4

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