Propagation of electric fields induced by optical phonons in semiconductor heterostructures

被引：26

作者：

Rukhlenko, I. D. ^{[1
]}

Fedorov, A. V. ^{[1
]}

机构：

[1] SI Vavilov State Opt Inst, All Russia Res Ctr, St Petersburg 199034, Russia

来源：

OPTICS AND SPECTROSCOPY | 2006年 / 100卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S0030400X06020135

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The penetration of electric fields accompanying long-wavelength optical phonos from one region of a semiconductor heterostructure to another is investigated. It is proposed to determine the penetration depth of such fields from the relaxation caused by these fields in quantum dots. By the example of a cylindrical Ge quantum dot embedded in a GaP/GaAs heterostructure, it is shown that the electric fields induced by longitudinal optical phonons can penetrate through the interface between semiconductors at distances of about 100 nm.

引用

页码：238 / 244

页数：7

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