Dielectric Properties of Mechanically Activated Strontium Titanate Ceramics

被引:6
|
作者
Zivojinovic, Jelena [1 ]
Kosanovic, Darko [1 ]
Blagojevic, Vladimir A. [1 ]
Pavlovic, Vera P. [2 ]
Tadic, Nenad [3 ]
Vlahovic, Branislav [4 ,5 ,6 ]
Pavlovic, Vladimir B. [7 ]
机构
[1] Serbian Acad Arts & Sci, Inst Tech Sci, Knez Mihailova 35-4, Belgrade 11000, Serbia
[2] Univ Belgrade, Fac Mech Engn, Kraljice Marije 16, Belgrade 35, Serbia
[3] Univ Belgrade, Fac Phys, Studentski Trg 12, Belgrade 11000, Serbia
[4] North Carolina Cent Univ, Durham, NC 27707 USA
[5] NASA Univ Res Ctr Aerosp Device Res & Educ, Durham, NC 27707 USA
[6] NSF Ctr Res Excellence Sci, Technol Computat Ctr Fundamental & Appl Sci & Educ, Durham, NC 27707 USA
[7] Univ Belgrade, Fac Agr, Nemanjina 6, Belgrade 11080, Serbia
基金
美国国家科学基金会;
关键词
XRD; SEM; Raman; Dielectric permittivity; SrTiO3; ceramics; SRTIO3; THIN-FILMS; OXYGEN VACANCIES; RAMAN-SCATTERING; GRAIN-BOUNDARY; CUBIC SRTIO3; MICROSTRUCTURE; SPECTROSCOPY; DEGRADATION; RELAXATION; BATIO3;
D O I
10.2298/SOS2204401Z
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, microstructure evolution and dielectric properties of SrTiO3 ceramic have been investigated, whereby mechanical activation of SrTiO3 powders was used to modify the functional properties of ceramic materials. Microstructural SEM analysis of SrTiO3 ceramics showed that the increase in mechanical activation time results in less porous samples. Raman spectroscopy indicated changes in the broadening and asymmetry of the TO2 mode with a change in the time of mechanical activation. TO2 mode showed a Fano asymmetry due to its interaction with polarization fluctuations in polar micro-regions, which are a consequence of the presence of oxygen vacancies caused by activation. The maximum value of dielectric permittivity was observed in the sample activated for 10 min. Also, the sample activated for 10 min exhibits relatively low values of loss tangent, compared to the other mechanically activated samples, providing the best overall dielectric performance
引用
收藏
页码:401 / 414
页数:14
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