High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect

被引：74
|
作者：
Sciuto, Antonella
Roccaforte, Fabrizio
Di Franco, Salvatore
Raineri, Vito
Bonanno, Giovanni
机构：
[1] CNR, IMM, I-95121 Catania, Italy
[2] Osserv Astrofis Catania, INAF, I-95123 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期
关键词：
D O I：
10.1063/1.2337861
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, high responsivity 4H-SiC vertical Schottky UV photodiodes based on the pinch-off surface effect, obtained by means of self-aligned Ni2Si interdigit contacts, are demonstrated. The diode area was 1 mm(2), with a 37% directly exposed to the radiation. The dark current was about 200 pA at -50 V. Under a 256 nm UV illumination, a current increase of more than two orders of magnitude is observed, resulting in a 78% internal quantum efficiency. The vertical photodiodes showed an ultraviolet-visible rejection ratio > 7x10(3) and a responsivity a factor of about 1.8 higher than a conventional planar metal-semiconductor-metal structure.
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页数：3
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