A CMOS temperature-to-frequency converter with. an inaccuracy of less than ±0.5 °C (3σ) from -40 °C to 105 °C

被引:29
|
作者
Makinwa, Kofi A. A. [1 ]
Snoeij, Martijn F. [1 ]
机构
[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, EEMCS, Elect Instrumentat Lab, NL-2628 CD Delft, Netherlands
关键词
chopper modulation; electrothermal integrated circuit; frequency-locked-loop (FLL); temperature sensors;
D O I
10.1109/JSSC.2006.884865
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a temperature-to-frequency converter (TFC) implemented in a standard CMOS process. Its output frequency is determined by the phase-shift of an electrothermal filter, which consists of a heater and a temperature sensor realized in the substrate of a standard CMOS chip. The filter's phase-shift is determined by the geometry of the thermal path between the heater and the sensor, and by the temperature-dependent rate at which heat diffuses through the substrate. The resulting temperature-dependent phase-shift is quite well-defined, since filter geometry is defined by lithography, while the thermal diffusivity of the high-purity lightly-doped silicon substrate is essentially constant. The filter was used as the frequency-determining component of a frequency-locked loop (FLL), whose output frequency is then a well-defined function of temperature. Using this approach, a TFC with an inaccuracy of +/- 0.5 degrees C (3 sigma) over the industrial temperature range (-40 degrees C to 105 degrees C) has been realized in a standard 0.7-mu m CMOS process.
引用
收藏
页码:2992 / 2997
页数:6
相关论文
共 50 条
  • [21] A 0.85V 600nW All-CMOS Temperature Sensor with an Inaccuracy of ±0.4°C (3σ) from-40 to 125°C
    Souri, Kamran
    Chae, Youngcheol
    Thus, Frank
    Makinwa, Kofi
    2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 222 - +
  • [22] A ±0.15 °C (3σ) Inaccuracy CMOS Smart Temperature Sensor from 40 °C to 125 °C with a 10 ms Conversion Time-Leveraging an Adaptative Decimation Filter in 65 nm CMOS Technology
    Passos, Fabio
    Santos, Gabriel
    dos Santos, Marcelino Bicho
    ELECTRONICS, 2024, 13 (14)
  • [23] A CMOS On-Chip Temperature Sensor with-0.21°C/ 0.17°C Inaccuracy from-20°C to 100°C
    Zhao, Chen
    Wang, Yen-Ting
    Genzer, David
    Chen, Degang
    Geiger, Randall
    2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2013, : 2621 - 2625
  • [24] A BJT-Based Temperature Sensor in 40-nm CMOS With ±0.8°C (3σ) Untrimmed Inaccuracy
    Zhang, Tan-Tan
    Gao, Yuan
    32ND IEEE INTERNATIONAL SYSTEM ON CHIP CONFERENCE (IEEE SOCC 2019), 2019, : 1 - 4
  • [25] A Low-Power Self-Calibration Digital-Output CMOS Temperature Sensor with ± 0.1°C Inaccuracy from-40°C to 85°C
    Niu, Yuze
    Lu, Wengao
    Zhang, Yacong
    Yu, Shanzhe
    Chen, Zhongjian
    2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2017, : 1005 - 1008
  • [26] An Embedded 65 nm CMOS Remote Temperature Sensor With Digital Beta Correction and Series Resistance Cancellation Achieving an Inaccuracy of 0.4°C (3σ) From-40°C to 130°C
    Pu, Xiao
    Ash, Mikel
    Nagaraj, Krishnaswamy
    Park, Joonsung
    Vu, Steve
    Kimelman, Paul
    de la Haye, Sean
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (09) : 2127 - 2137
  • [27] Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of ±0.25 °C (±3σ) from -70 °C to 130 °C
    Aita, Andre L.
    Pertijs, Michiel A. P.
    Makinwa, Kofi A. A.
    Huijsing, Johan H.
    Meijer, Gerard C. M.
    IEEE SENSORS JOURNAL, 2013, 13 (05) : 1840 - 1848
  • [28] A BJT-Based Temperature-to-Digital Converter With a 0.25 C 3 $\sigma$ -Inaccuracy From-40 C to 180 C Using Heater-Assisted Voltage Calibration
    Yousefzadeh, Bahman
    Makinwa, Kofi A. A.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2020, 55 (02) : 369 - 377
  • [29] A 0.45-V MOSFETs-Based Temperature Sensor Front-End in 90 nm CMOS With a Noncalibrated ±3.5 °C 3σ Relative Inaccuracy From-55 °C to 105 °C
    Lu, Li
    Block, Scott T.
    Duarte, David E.
    Li, Changzhi
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2013, 60 (11) : 771 - 775
  • [30] A BJT-Based Temperature-to-Digital Converter With ±60 mK (3σ) Inaccuracy From-55 °C to+125 °C in 0.16-μm CMOS
    Yousefzadeh, Bahman
    Shalmany, Saleh Heidary
    Makinwa, Kofi A. A.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (04) : 1044 - 1052