Humidity Stability of All-Sputtered Metal-Oxide Electric-Double-Layer Transistors

被引：13

作者：

Wei, Li ^{[1
,2
]}

Huang, Wanqing ^{[1
,2
]}

Fang, Xiaoli ^{[1
,2
]}

Wang, Xinchi ^{[1
,2
]}

Mou, Penglin ^{[1
,2
]}

Shao, Feng ^{[1
,2
]}

Gu, Xiaofeng ^{[1
,2
]}

机构：

[1] Jiangnan Univ, Dept Elect Engn, Wuxi 214122, Jiangsu, Peoples R China

[2] Jiangnan Univ, Minist Educ, Engn Res Ctr IoT Technol Applicat, Wuxi 214122, Jiangsu, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Dielectrics; Aluminum oxide; Humidity; Sputtering; Logic gates; Protons; Capacitance; Electric-double-layer (EDL) transistor; humidity; metal oxide; sputtering; THIN-FILM TRANSISTORS; LOW-VOLTAGE; GATE DIELECTRICS; ALUMINA; ELECTROLYTE;

D O I：

10.1109/TED.2020.3031238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previous methods of making metal-oxide electric-double-layer transistors (EDLTs) usually require a combination of different vacuum- or solution-based deposition techniques. Recent work has shown that sputtering offers another possibility to prepare oxide proton-conducting dielectrics for metal-oxide EDLTs. In this work, aluminum oxide proton-conducting dielectric is deposited by the dc reactive sputtering method, which helps the fabrication of fully metal-oxide EDLTs only with the sputtering technique. Humidity dependence of the obtained metal-oxide EDLTs is studied. It is found that humidity is a critical factor influencing the electrical characteristics. The underlying mechanism of humidity dependence is analyzed. Encapsulation of the device with polymer is demonstrated to provide basic isolation from humidity variation and stabilize the device.

引用

页码：5532 / 5536

页数：5

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