Integrated self-steered silicon detector array

被引：0

作者：

Wu, Y ^{[1
]}

Fusco, VF ^{[1
]}

Chen, Q ^{[1
]}

Stewart, JAC ^{[1
]}

Gamble, HS ^{[1
]}

Armstrong, BM ^{[1
]}

机构：

[1] Queens Univ Belfast, High Frequency Res Grp, No Ireland Semicond Res Ctr, Sch Elect Engn, Belfast, Antrim, North Ireland

来源：

IEE PROCEEDINGS-MICROWAVES ANTENNAS AND PROPAGATION | 2000年 / 147卷 / 02期

关键词：

D O I：

10.1049/ip-map:20000181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

monolithic integrated surface-oriented Schottky-barrier diode Is developed. The diode uses active n-on-n(+) and contact n(+) regions doped on a high-resistivity silicon substrate using phosphorus ion implantation and is incorporated into a microstrip patch constructed over a patterned SiO2, layer. The process technology developed is precise. simple, low cost and suitable for mass production. The resulting integrated detector has a planar configuration and is shown to have a sensitivity of 1.83mV/mW/cm(2) at 14.95GHz. The effects of device annealing on microwave performance are examined and it is shown that L-tn increase of(S + N)/N ratio for the detector of 6dB can be achieved after device annealing. The application of the all-silicon detector as a self-tracking receiver is also shown.

引用

页码：106 / 110

页数：5

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