Integrated self-steered silicon detector array

monolithic integrated surface-oriented Schottky-barrier diode Is developed. The diode uses active n-on-n(+) and contact n(+) regions doped on a high-resistivity silicon substrate using phosphorus ion implantation and is incorporated into a microstrip patch constructed over a patterned SiO2, layer. The process technology developed is precise. simple, low cost and suitable for mass production. The resulting integrated detector has a planar configuration and is shown to have a sensitivity of 1.83mV/mW/cm(2) at 14.95GHz. The effects of device annealing on microwave performance are examined and it is shown that L-tn increase of(S + N)/N ratio for the detector of 6dB can be achieved after device annealing. The application of the all-silicon detector as a self-tracking receiver is also shown.