Preparation and characterization of Ge1Sb2Te4 thin films for phase change memory applications

被引：15

作者：

Sangeetha, B. G. ^{[1
]}

Joseph, C. M. ^{[2
]}

Suresh, K. ^{[3
]}

机构：

[1] RNS Inst Technol, Dept Elect & Commun, Bangalore, Karnataka, India

[2] Dayananda Sagar Coll Engn, Dept Phys, Bangalore, Karnataka, India

[3] Dayananda Sagar Coll Engn, Dept Instrumentat, Bangalore, Karnataka, India

来源：

MICROELECTRONIC ENGINEERING | 2014年 / 127卷

关键词：

Chalcogenide; Ge1Sb2Te4; Phase change memory; Electrical characteristics; Non volatile memories; OPTICAL-PROPERTIES; GE2SB2TE5; FILMS; GESBTE;

D O I：

10.1016/j.mee.2014.04.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge1Sb2Te4 (GST) thin films were prepared from their respective polycrystalline bulk on ITO coated glass substrates by a thermal evaporation technique. Thin films and devices based on GST for phase change Random Access Memory (RAM) applications were studied using temperature dependent film properties. The phase-transformation temperature of the film was evaluated by the temperature dependent resistance measurement studies using a two probe method. Using current voltage (IV) measurements on Al/GST/ITO/Glass devices using current sweep and voltage sweep modes, confirmed the phase change of the material between amorphous to crystalline states. IV characteristics measurements using a current sweeping mode of a PCM cell with a lesser thickness of 100 nm showed a large snap-back at a low voltage of 1.2 V with a resistance difference of two orders of magnitude. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：77 / 80

页数：4

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