Epitaxial growth and surface instabilities in alloy films.

被引:0
|
作者
Desai, RC [1 ]
Huang, ZF [1 ]
机构
[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
来源
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2002年 / 223卷
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
431-COLL
引用
收藏
页码:U451 / U451
页数:1
相关论文
共 50 条
  • [31] EFFECTIVE GALVANOMAGNETIC PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE FILMS.
    Glushkov, E.A.
    Reztsov, V.F.
    Soviet physics. Semiconductors, 1980, 14 (07): : 748 - 750
  • [32] Surface modification of BOPP films.
    Bader, H
    Gessler, M
    Rodler, N
    KUNSTSTOFFE-PLAST EUROPE, 1997, 87 (05): : 636 - &
  • [33] Growth of pentacene thin films.
    Tromp, RM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 229 : U637 - U637
  • [34] Study of Phosphorus-Doped Germanium Epitaxial Films.
    Smorodina, T.A.
    Danil'chuk, L.N.
    Stepanova, A.N.
    Neorganiceskie materialy, 1985, 21 (02): : 181 - 184
  • [35] SPIN-WAVE PROPAGATION IN EPITAXIAL YIG FILMS.
    Schilz, W.
    1600, (28):
  • [36] PHOTOLUMINESCENCE OF EPITAXIAL n-TYPE GaInAsP FILMS.
    Kolesnik, L.I.
    Loshinskii, A.M.
    Rogulin, V.Yu.
    Dolginov, L.M.
    Chupakhina, V.M.
    Soviet physics. Semiconductors, 1979, 13 (06): : 674 - 676
  • [37] STRUCTURE AND GROWTH OF THIN FILMS.
    VOOK, R.W.
    1982, V 27 (N 4): : 209 - 245
  • [38] TRANSMITTED PHONON EFFECT IN EPITAXIAL GALLIUM ARSENIDE FILMS.
    Bolkhovityanov, Yu.B.
    Kravchenko, A.F.
    Kriger, E.D.
    Semchukov, N.F.
    Skok, E.M.
    Shebeshten, T.B.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 285 - 287
  • [39] Study of the Growth Kinetics, the Solubility and the Polytypism of Phosphorus-doped Silicon Carbide Epitaxial Films.
    Mokhov, E.N.
    Usmanova, M.M.
    Yuldashev, G.V.
    Makhmudov, B.S.
    Neorganiceskie materialy, 1981, 17 (02): : 258 - 261
  • [40] Initial stages of growth of LPCVD polysilicon films. Effect of the surface "ageing"
    Davazoglou, D
    JOURNAL DE PHYSIQUE IV, 1999, 9 (P8): : 893 - 900