Nanotubular metal-insulator-metal capacitor arrays for energy storage

被引:0
|
作者
Banerjee, Parag [2 ,3 ]
Perez, Israel [2 ,3 ]
Henn-Lecordier, Laurent [2 ,3 ]
Lee, Sang Bok [1 ,5 ]
Rubloff, Gary W. [2 ,3 ,4 ]
机构
[1] Univ Maryland, Dept Chem & Biochem, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[3] Univ Maryland, Syst Res Inst, College Pk, MD 20742 USA
[4] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
[5] Korea Adv Inst Sci & Technol, Dept Nanosci & Technol, Taejon 305701, South Korea
关键词
ATOMIC LAYER DEPOSITION; ANODIC ALUMINA; SILICON; METROLOGY; DENSITY;
D O I
10.1038/NNANO.2009.37
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nanostructured devices have the potential to serve as the basis for next-generation energy systems that make use of densely packed interfaces and thin films'. One approach to making such devices is to build multilayer structures of large area inside the open volume of a nanostructured template. Here, we report the use of atomic layer deposition to fabricate arrays of metal-insulator-metal nanocapacitors in anodic aluminium oxide nanopores. These highly regular arrays have a capacitance per unit planar area of similar to 10 mu F cm(-2) for 1-mu m-thick anodic aluminium oxide and similar to 100 mu F cm(-2) for 10-mu m-thick anodic aluminium oxide, significantly exceeding previously reported values for metal-insulator-metal capacitors in porous templates(2-6). It should be possible to scale devices fabricated with this approach to make viable energy storage systems that provide both high energy density and high power density.
引用
收藏
页码:292 / 296
页数:5
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