Permittivity of a ferroelectric film beneath a metal electrode

被引：6

作者：

Bayer, Christian ^{[1
]}

Jackson, Timothy J. ^{[1
]}

机构：

[1] Univ Birmingham, Sch Engn, Birmingham B15 2TT, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

关键词：

DIELECTRIC RESPONSE; STRONTIUM-TITANATE;

D O I：

10.1063/1.2221524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The permittivity of a ferroelectric n-type semiconductor varies smoothly with depth beneath a reversed biased Schottky contact. In partially depleted films, the depletion layer controls the capacitance. In fully depleted films the inverse capacitance is proportional to the thickness, which suggests that Schottky effects do not cause dead-layer behavior. (c) 2006 American Institute of Physics.

引用

页数：3

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