Setup for Measuring the Thermoelectric Properties of Ultrathin Wires

被引：0
|
作者：
Uryupin, O. N. [1 ]
Shabaldin, A. A. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 05期
关键词：
TRANSPORT; BISMUTH;
D O I：
10.1134/S1063782619050270
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An experimental setup is developed to measure the thermoelectric properties of semiconductor nanowires with diameters of up to 5 nm in dielectric matrices. This setup makes it possible to measure the electrical resistance and thermoelectric power of nanostructured samples in the temperature range of 77-400 K.
引用
收藏
页码：695 / 698
页数：4
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