On the Origin of Efficiency Droop of AlGaN Deep Ultraviolet Light Emitting Diodes

被引：0
|
作者：
Pandey, A. [1 ]
Aiello, A. [1 ]
Gim, J. [2 ]
Hovden, R. [2 ]
Kioupakis, E. [2 ]
Bhattacharya, P. [1 ]
Mi, Z. [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
来源：
2020 IEEE PHOTONICS CONFERENCE (IPC) | 2020年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The causes for the efficiency droop of AlGaN UV LEDs will be investigated. Auger recombination coefficients of AlGaN multiple quantum wells with different Al composition have been measured. These results have been used to design efficient AlGaN LEDs with emission wavelength lower than 255 nm.
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