共 50 条
- [41] Modification of defect structure and properties of CdxHg1-xTe semiconductors by laser pulses MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1997, 3182 : 306 - 312
- [42] STRUCTURE OF CRYSTALS OF SOLID-SOLUTIONS OF CDXHG1-XTE GROWN FROM MELT RUSSIAN METALLURGY, 1974, (05): : 195 - 198
- [45] PIEZORESISTANCE OF CDXHG1-XTE SOLID-SOLUTIONS UNDER UNIAXIAL COMPRESSION CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 266 - 270
- [47] SOLID-PHASE LASER DOPING OF CDXHG1-XTE SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 320 - 321
- [49] INFLUENCE OF FLUCTUATIONS OF THE COMPOSITION ON THE PHOTOELECTRIC PROPERTIES OF CDXHG1-XTE SOLID-SOLUTION SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 675 - 676
- [50] Photoelectrical properties of CdxHg1-xTe epitaxial layers irradiated by nanosecond laser pulses Semicond Sci Technol, 1 (61-64):