Direct bonding of GaInAsP/InP membrane structure on SOI wafer

被引：0

作者：

Maruyama, Takeo ^{[1
,2
]}

Okumurai, Tadashi ^{[1
]}

Sakamoto, Shinichi ^{[1
]}

Miura, Koji ^{[1
]}

Nishimoto, Yoshifumi ^{[1
]}

Arai, Shigehisa ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, 2-12-1-S9-5 Ookayama, Tokyo 1528552, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama, Japan

来源：

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年

基金：

日本科学技术振兴机构;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wafer bonding technology was investigated to integrate active photonic devices on a silicon on insulator (SOI) wafer for very compact photonic-integrated circuits. A single-quantum-well (SQW) GaInAsP/InP membrane structure bonded onto an SOI wafer was successfully obtained by a direct bonding method with a thermal annealing at 300-450 degrees C under H-2 atmosphere. The PL intensity of the SQW membrane structure did not degrade after this direct bonding process and its spectral shape did not change. This wafer bonding technique can be applied to realize a direct optical coupling through SOI passive waveguides from membrane active region

引用

页码：275 / +

页数：2

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