High-Speed Electroabsorption Modulator Integrated DFB Laser for 40 Gbps and 100 Gbps Application

被引：7

作者：

Makino, Shigeki ^{[1
]}

Shinoda, Kazunori ^{[1
]}

Kitatani, Takeshi ^{[1
]}

Hayashi, Hiroaki ^{[1
]}

Shiota, Takashi ^{[1
]}

Tanaka, Shigehisa ^{[1
]}

Aoki, Masahiro ^{[1
]}

Sasada, Noriko ^{[2
]}

Naoe, Kazuhiko ^{[2
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Tokyo 1858601, Japan

[2] Opnext Japan Inc, Yokohama, Kanagawa 2448567, Japan

来源：

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年

关键词：

OPTICAL MODULATOR; ABSORPTION; BAND;

D O I：

10.1109/ICIPRM.2009.5012443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. To realize the high-speed, small-footprint, low-power-consumption and cost-effective semiconductor light source, we have investigated the several key technologies. Newly developed 1.3 mu m range 25 Gbps and 43 Gbps EA/DFB laser showed a good transmission performance over 10 km single mode fiber. These devices are suitable for next generation, high speed network systems, 100 Gbps and 40 Gbps Ethernet.

引用

页码：362 / +

页数：3

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