N atoms recombination on a silica surface: A global theoretical approach

被引:38
|
作者
Rutigliano, M.
Pieretti, A.
Cacciatore, M.
Sanna, N.
Barone, V.
机构
[1] CNR, IMIP, Inst Inorgan Methodol & Plasmas, Sez Bari, I-70126 Bari, Italy
[2] Consorzio Interuniv Applicaz Supercalcolo Univ &, CASPUR, I-00185 Rome, Italy
[3] Univ Naples Federico II, Dipartimento Chim, I-80126 Naples, Italy
关键词
density functional calculations; models of surface chemical reactions; molecular dynamics; catalysis;
D O I
10.1016/j.susc.2005.12.080
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The paper reports on a semiclassical dynamics study about N-2 formation after nitrogen atom recombination on a silica surface via the Eley-Rideal collisional mechanism at T = 1000 K. The molecular dynamics study was carried out using a fitted potential energy surface based on new density functional computations on clusters cleaved from the beta-cristobalite unit cell. The B3LYP results obtained using silica clusters of increasing dimensions (up to Si7O14H14) show that only atomic nitrogen is adsorbed (binding energy E-b congruent to 2.7-2.8 eV). Then, the obtained potential energy surface has been used in a time-dependent semiclassical collisional method which is able to describe, at a very detailed level, the recombination of N atoms on the surface assisted by the phonon excitation mechanism of the substrate. The recombination coefficient gamma of the Eley-Rideal recombination mechanism was calculated together with the reaction energetics. (c) 2006 Elsevier B.V. All rights reserved.
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页码:4239 / 4246
页数:8
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