Ohmic metal/Hg1-xCdxTe (x ≈0.3) contacts

Some technological features of p-type Hg1-xCdxTe (x approximate to 0.3) liquid phase epitaxy layers grown on Cd1-yZnyTe (y approximate to 0.04) substrates are briefly discussed. Energy dispersive analysis of mercury-cadmium-telluride (MCT) layers and metal contacts (Au(In)/Cr(Mo,Ti)) to MCT layers together with their current-voltage characteristics at T approximate to 80 and 300 K are considered. It is shown that Cr(Mo,Ti)/MCT contacts have ohmic characteristics or close to them at T approximate to 80 and 300 K for both n- and p-type MCT layers. This gives the opportunity to form ohmic contacts to n- and p-type pads in one technological cycle. The contact resistance R-c is much smaller as compared to the HgCdTe p-n junction resistance R-0[ R(c)A (< 10(-2) omega cm(2)) R(0)A (> 10(3) omega cm(2)), where R-0 is the zero bias diode resistance at T = 80 K, and A is the MCT (x approximate to 0.3) junction area]. So, such contacts are appropriate for the fabrication of photovoltaic HgCdTe detectors.