Transverse magnetoresistance of metal interfaces with Hg1-xCdxTe

被引：1
|
作者：
Hu, XN [1 ]
Fang, JX [1 ]
Gong, HM [1 ]
Zhao, J [1 ]
Lu, HQ [1 ]
Li, XY [1 ]
Hu, XW [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期
关键词：
D O I：
10.1063/1.370168
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A magnetic field perpendicular to a two-terminal semiconductor will increase the sheet resistance under the contact as well as that of the noncontact region. A method using magnetoresistance is presented in this article to study the carrier's behavior at the metal-Hg1-xCdxTe interface, in which we consider the disruption of the interface by the deposition of metal. Experimental results show that an inversion layer exists between p-Hg0.783Co0.217Te and the deposited Sn/Au. (C) 1999 American Institute of Physics. [S0021-8979(99)07509-X].
引用
收藏
页码：6606 / 6609
页数：4
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