Transverse magnetoresistance of metal interfaces with Hg1-xCdxTe

被引：1

作者：

Hu, XN ^{[1
]}

Fang, JX ^{[1
]}

Gong, HM ^{[1
]}

Zhao, J ^{[1
]}

Lu, HQ ^{[1
]}

Li, XY ^{[1
]}

Hu, XW ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.370168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A magnetic field perpendicular to a two-terminal semiconductor will increase the sheet resistance under the contact as well as that of the noncontact region. A method using magnetoresistance is presented in this article to study the carrier's behavior at the metal-Hg1-xCdxTe interface, in which we consider the disruption of the interface by the deposition of metal. Experimental results show that an inversion layer exists between p-Hg0.783Co0.217Te and the deposited Sn/Au. (C) 1999 American Institute of Physics. [S0021-8979(99)07509-X].

引用

页码：6606 / 6609

页数：4

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