Domain switching of fatigued ferroelectric thin films

被引：6
|
作者：
Lim, Yun Tak [1 ]
Son, Jong Yeog [2 ]
Shin, Young-Han [3 ,4 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Kyung Hee Univ, Dept Appl Phys, Coll Appl Sci, Suwon 446701, South Korea
[3] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[4] Univ Ulsan, EHSRC, Ulsan 680749, South Korea
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 19期
基金：
新加坡国家研究基金会;
关键词：
FORCE MICROSCOPY; WALL MOTION; MECHANISM; NUCLEATION; DENSITY; BATIO3; GROWTH; FIELDS;
D O I：
10.1063/1.4876605
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue. (C) 2014 AIP Publishing LLC.
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页数：4
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