Domain switching of fatigued ferroelectric thin films

被引：6
|
作者：
Lim, Yun Tak [1 ]
Son, Jong Yeog [2 ]
Shin, Young-Han [3 ,4 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Kyung Hee Univ, Dept Appl Phys, Coll Appl Sci, Suwon 446701, South Korea
[3] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[4] Univ Ulsan, EHSRC, Ulsan 680749, South Korea
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 19期
基金：
新加坡国家研究基金会;
关键词：
FORCE MICROSCOPY; WALL MOTION; MECHANISM; NUCLEATION; DENSITY; BATIO3; GROWTH; FIELDS;
D O I：
10.1063/1.4876605
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Domain switching kinetics in disordered ferroelectric thin films
    Jo, J. Y.
    Han, H. S.
    Yoon, J. -G.
    Song, T. K.
    Kim, S. -H.
    Noh, T. W.
    PHYSICAL REVIEW LETTERS, 2007, 99 (26)
  • [2] Effect of domain nucleation on switching of ferroelectric thin films
    Zhang, HZ
    Robert, M
    Rabson, TA
    INTEGRATED FERROELECTRICS, 2002, 44 : 125 - 134
  • [3] Simulation of domain patterns in fatigued ferroelectric films
    Wang, C. L.
    Li, J. C.
    Zhao, M. L.
    Yang, K.
    Wang, X. Y.
    Zhang, J. L.
    INTEGRATED FERROELECTRICS, 2006, 78 (69-73) : 69 - 73
  • [4] Ferroelastic domain structure and switching in epitaxial ferroelectric thin films
    Lee, Kilho
    Baik, Sunggi
    ANNUAL REVIEW OF MATERIALS RESEARCH, 2006, 36 : 81 - 116
  • [5] Domain switching and spatial dependence of permittivity in ferroelectric thin films
    Chai, FK
    Brews, JR
    Schrimpf, RD
    Birnie, DP
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2505 - 2516
  • [6] Nanoscale domain switching behaviour in polycrystalline ferroelectric thin films
    Wicks, S.
    Anbusathiah, V.
    Nagarajan, V.
    NANOTECHNOLOGY, 2007, 18 (46)
  • [7] Switching of ferroelectric thin films
    Chen, J
    Ho, KS
    Lin, J
    Rabson, TA
    INTEGRATED FERROELECTRICS, 1995, 10 (1-4) : 215 - 222
  • [8] Domain switching of ferroelectric thin films by using a scanning probe microscope
    Son, J. Y.
    Min, Seongsik
    Kim, C. H.
    Kim, Bog G.
    Cho, J. H.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (02) : 655 - 658
  • [9] Observation of asymmetric ferroelectric switching in fatigued ferroelectric vinylidene fluoride and trifluoroethylene copolymer films
    Zhu, GuoDong
    Zeng, ZhiGang
    Zhang, Qun
    Yan, XueJian
    Liu, Ran
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)
  • [10] Switching processes of thin ferroelectric films
    Sidorkin, A. S.
    Nesterenko, L. P.
    Darinskii, B. M.
    Sidorkin, A. A.
    Senkevich, S. V.
    Vorotnikov, E. V.
    Nguyen Hoai Thuong
    MATERIALS RESEARCH BULLETIN, 2017, 96 : 206 - 210
12345