Spin pumping induced non-equilibrium spin accumulation at the interface shows an anomalous anti-damping effect for heavy metal nonmagnetic layer deposited on a ferromagnetic layer at the spin diffusion length regime without application of any external electrical current. In this work, we report a comprehensive study of static and dynamic magnetic properties of Co50Fe50 (20 nm)/Ta (t nm) thin films where the thickness of the Ta layer was varied as t = 0, 2, 5, 10, 20 and 30 nm. Ferromagnetic resonance measurements revealed a significant reduction of Gilbert damping parameter for CoFe (20 nm)/Ta (2 nm) sample in comparison to bare CoFe (20 nm) sample due to interfacial Rashba spin-orbit interaction accompanied by the formation of Ta2O5 as evidenced by x-ray photoelectron spectroscopy. The extrinsic contributions to Gilbert damping were ruled out in our samples with the invariance of resonance fields and linear increment of linewidth with frequency for different thicknesses of Ta. The saturation magnetization of the bare Co50Fe50 (20 nm) sample was found out to be 1831 +/- 54 mT without any annealing effect or seed layer. Maximum spin mixing conductance of -31.46 x 10(18) m(- 2) was found for CoFe (20 nm)/Ta (2 nm) sample, whereas it was nearly constant for all other samples.
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Northeastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R ChinaNortheastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Feng, Yuxuan
Tong, Junwei
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Northeastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R ChinaNortheastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Tong, Junwei
Ruan, Liuxia
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Northeastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R ChinaNortheastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Ruan, Liuxia
Qin, Gaowu
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Northeastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R ChinaNortheastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Qin, Gaowu
Tian, Fubo
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Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R ChinaNortheastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
Tian, Fubo
Zhang, Xianmin
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Northeastern Univ, State Key Lab Rolling & Automat, Shenyang 110819, Peoples R China
Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Peoples R ChinaNortheastern Univ, Key Lab Anisotropy & Texture Mat, Minist Educ, Shenyang 110819, Peoples R China
机构:
Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
Marukame, Takao
Ishikawa, Takayuki
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Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
Ishikawa, Takayuki
Hakamata, Shinya
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Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
Hakamata, Shinya
Matsuda, Ken-ichi
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Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
Matsuda, Ken-ichi
Uemura, Tetsuya
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Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
Uemura, Tetsuya
Yamamoto, Masafumi
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Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, JapanHokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
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Ohio State Univ, Dept Phys, Columbus, OH 43210 USAOhio State Univ, Dept Phys, Columbus, OH 43210 USA
Lee, Aidan J.
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Ahmed, Adam S.
Guo, Side
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Ohio State Univ, Dept Phys, Columbus, OH 43210 USAOhio State Univ, Dept Phys, Columbus, OH 43210 USA
Guo, Side
Esser, Bryan D.
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Ohio State Univ, Ctr Electron Microscopy & Anal, Columbus, OH 43210 USA
Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USAOhio State Univ, Dept Phys, Columbus, OH 43210 USA
Esser, Bryan D.
McComb, David W.
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Ohio State Univ, Ctr Electron Microscopy & Anal, Columbus, OH 43210 USA
Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USAOhio State Univ, Dept Phys, Columbus, OH 43210 USA
McComb, David W.
Yang, Fengyuan
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Ohio State Univ, Dept Phys, Columbus, OH 43210 USAOhio State Univ, Dept Phys, Columbus, OH 43210 USA