Growth and characteristics of reactive pulsed laser deposited molybdenum trioxide thin films

被引：52

作者：

Hussain, OM ^{[1
]}

Rao, KS

Madhuri, KV

Ramana, CV

Naidu, BS

Pai, S

John, J

Pinto, R

机构：

[1] Sri Venkateswara Univ, Thin Film Lab, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[2] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Mumbai 400008, India

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 75卷 / 03期

关键词：

D O I：

10.1007/s003390100994

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molybdenum trioxide thin films were prepared by reactive pulsed laser deposition on Corning 7059 glass substrates. The influence of oxygen partial pressure and deposition temperature on the structure, surface morphology and optical properties of these films was studied to understand the growth mechanism Of MoO3 thin films. The films formed at 473 K in an oxygen partial pressure of 100 mTorr exhibited predominantly a (0k0) orientation, corresponding to an orthorhombic layered structure Of alpha-MoO3. The evaluated optical band gap of the films was 3.24 eV. The crystallite size increased with increase of deposition temperature. The films formed at an oxygen partial pressure Of pO(2) = 100 mTorr and at a deposition temperature greater than 700 K exhibited both (0k0) and (0kl) orientations, representing alpha - beta mixed phases Of MoO3. The films formed at an oxygen partial pressure less than 100 mTorr were found to be sub-stoichiometric with alpha - beta mixed phases. The investigation revealed the growth of polycrystalline and single-phase orthorhombic-layered-structure alpha-MoO3 thin films with composition nearly approaching the nominal stoichiometry at moderate substrate temperatures in an oxygen partial pressure of 100 mTorr.

引用

页码：417 / 422

页数：6

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