Transparent conducting oxide top contacts for organic electronics

被引:12
|
作者
Franklin, Joseph B.
Gilchrist, James B.
Downing, Jonathan M.
Roy, Kirsty A.
McLachlan, Martyn A. [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
基金
英国工程与自然科学研究理事会;
关键词
ZNO THIN-FILMS; ZINC-OXIDE; OXYGEN-PRESSURE; LASER-ABLATION; TEMPERATURE; ABSORPTION; DEPOSITION; GROWTH; CELLS;
D O I
10.1039/c3tc31296h
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A versatile method for the deposition of transparent conducting oxide (TCO) layers directly onto conjugated polymer thin film substrates is presented. Using pulsed laser deposition (PLD) we identify a narrow window of growth conditions that permit the deposition of highly transparent, low sheet resistance aluminium-doped zinc oxide (AZO) without degradation of the polymer film. Deposition on conjugated polymers mandates the use of low growth temperatures (<200 degrees C), here we deposit AZO onto poly-3-hexylthiophene (P3HT) thin films at 150 degrees C, and investigate the microstructural and electrical properties of the AZO as the oxygen pressure in the PLD chamber is varied (5-75 mTorr). The low oxygen pressure conditions previously optimized for AZO deposition on rigid substrates are shown to be unsuitable, resulting in catastrophic damage of the polymer films. By increasing the oxygen pressure, thus reducing the energy of the ablated species, we identify conditions that allow direct deposition of continuous, transparent AZO films without P3HT degradation. We find that uptake of oxygen into the AZO films reduces the intrinsic charge carriers and AZO films with a measured sheet resistance of approximately 500 Omega square(-1) can be prepared. To significantly reduce this value we identify a novel process in which AZO is deposited over a range of oxygen pressures - enabling the deposition of highly transparent AZO with sheet resistances below 50 Omega square(-1) directly onto P3HT. We propose these low resistivity films are widely applicable as transparent top-contacts in a range of optoelectronic devices and highlight this by demonstrating the operation of a semi-transparent photovoltaic device.
引用
收藏
页码:84 / 89
页数:6
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